Character of interface dislocation in ZnO films grown by P-MBE on c-sapphire with MgO buffer Agus Setiawan
Department of Mechanical Engineering Education, Universitas Pendidikan Indonesia
Abstract
ZnO is a promising photonic material for exciton devices in the wavelengths ranging from blue to ultraviolet. Challenges of moving toward device applications are the difficulty in achieving high crystal quality ZnO by reducing dislocations. Therefore, efforts for reducing dislocations are very important. This paper addresses character of interface dislocations in ZnO film grown on c-sapphire with MgO buffer by P-MBE method. The ZnO films ware characterized, mainly by HRXRD and TEM. A high density interfacial threading dislocations was observed in the ZnO film with domination of edge-type as compared to screw and mixed types dislocations. Furthermore, crystalline quality of the ZnO films have increased by increasing of film thickness, indicating these threading dislocations are not along the c-axis so that they strongly interact with each other and annihilated. This result implies the important of initial growth control and role of buffer layer.
