COMPARISON OF TUNNELING CURRENTS IN GRAPHENE NANORIBBON TUNNEL FIELD EFFECT TRANSISTORS CALCULATED USING DIRAC LIKE EQUATION AND SCHRODINGER EQUATION Endi Suhendi, Lilik Hasanah, Dadi Rusdiana, Fatimah A. Noor, Neny Kurniasih, Khairurrijal
Universitas Pendidikan Indonesia, Institut Teknologi Bandung
Abstract
The tunneling current in graphene nanoribbon tunnel field effect transistor (GNR-TFET) has been quantum mechanically modeled. We compared the tunneling current in the GNR-TFET based on calculations using the Dirac like equation and the Schrodinger equation. The transfer matrix method (TMM), which is a numerical approach, was used to calculate electron transmittance and the tunneling current computed by using the Landauer formula. It was found that the tunneling currents calculated using both equations have similar characteristics for the same parameters, even though it has different value. The tunneling currents calculated by using the Dirac like equation are lower than those obtained under Schrodinger equation.
Keywords: Tunneling current, graphene nanoribbon, tunnel field effect transistor, Schrodinger equation, Dirac like equation
